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| TPCP8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCP8302 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications * * * * * Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 m (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.4 to -1.0 V (VDS = -6 V, ID = -1 mA) Unit: mm 0.330.05 0.05 M A 8 5 2.40.1 0.475 1 4 0.65 2.90.1 B A 0.05 M B 0.80.05 Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating -20 -20 12 -5 -20 1.48 1.23 W 0.58 0.36 6.5 -5 0.12 150 -55 to 150 mJ A mJ C C Unit V V V A S 0.025 S 0.170.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11 Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Single-pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range (Note 4) 1. Source1 2. Gate1 3. Source2 4. Gate2 5. Drain2 6. Drain2 7. Drain1 8. Drain1 JEDEC JEITA TOSHIBA 2-3V1G Weight: 0.017 g (typ.) Note: For Notes 1 to 6, see the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Circuit Configuration 8 7 6 5 Marking (Note 6) 8 7 6 5 8302 * 1 2 3 4 1 2 3 4 Lot No. 1 2008-12-21 2.80.1 TPCP8302 Thermal Characteristics Characteristic Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 84.5 C/W 101.6 215.5 C/W 347.2 Unit Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) 25.4 (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) 25.4 (b) Note 3: a) The power dissipation and thermal resistance values shown are for a single device. (During single-device operation, power is applied to one device only.) b) The power dissipation and thermal resistance values shown are for a single device. (During dual operation, power is applied to both devices evenly.). Note 4: VDD = -16 V, Tch = 25C (initial), L = 0.2 mH, RG = 25 , IAR = -5 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: on the lower left of the marking indicates Pin 1. * Weekly code (three digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2008-12-21 TPCP8302 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON-resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge1 Gate-drain ("Miller") charge tf toff Qg Qgs1 Qgd |Yfs| Ciss Crss Coss tr ton 4.7 VGS 0V -5V RL = 4 Test Condition VGS = 10 V, VDS = 0 V VDS = -20 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 12 V VDS = -6 V, ID = -1 mA VGS = -1.8 V, ID = -0.3 A VGS = -2.5 V, ID = -2.5A VGS = -4 V, ID = -2.5A VDS = -10 V, ID = -2.5A VDS = -10 V, VGS = 0 V, f = 1 MHz Min -20 -8 -0.4 7 Typ. 50 33 25 14 1500 220 240 10 20 65 200 20 3.6 5.1 Max 10 -10 -1.0 95 45 33 Unit A A V V m S pF ID = -2.5A OUT ns nC VDD -10 V Duty 1%, tw = 10 s VDD -16 V, VGS = -5 V, ID = -5 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -5 A, VGS = 0 V Min Typ. Max -20 1.2 Unit A V 3 2008-12-21 TPCP8302 ID - VDS -10 -10 V -2 V -1.8 V -2.2 V -2.5 V -3 V -4 V -1.4 V -2 VGS = -1.2 V 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 0 -0.4 Common source Ta = 25C Pulse test -20 -10 V -16 ID - VDS -2.5 V -2.2 V -3 V -4 V -6 V Common source Ta = 25C Pulse test -2 V (A) ID -6 ID -1.6 V (A) -8 -12 Drain current -4 -6 V Drain current -1.8 V -8 -1.6 V -4 -1.4 V VGS = -1.2V -0.8 -1.2 -1.6 -2.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -12 VDS - VGS -1.2 VDS (V) -10 Common source VDS = -10 V Pulse test -1.0 Common source Ta = 25C Pulse test (A) ID -8 -0.8 Drain-source voltage Drain current -6 -0.6 -4 25C -2 100C Ta = -55C -0.4 ID = -5 A -1.3 A -0.2 -2.5 A 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 0 0 -2 -4 -6 -8 -10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID (S) 100 1000 Common source Ta = 25C Pulse test RDS (ON) - ID |Yfs| Forward transfer admittance 10 Ta = -55C Drain-source ON-resistance RDS (ON) (m) 100C 100 VGS = -1.8 V -2.5 V -4 V 25C 1 -0.1 Common source VDS = -10 V Pulse test -1 -10 10 -0.1 -1 -10 Drain current ID (A) Drain current ID (A) 4 2008-12-21 TPCP8302 RDS (ON) - Ta 100 IDR - VDS -100 Drain-source ON-resistance RDS (ON) (m) 80 ID = -2.5 A (A) Common source Pulse test ID = -5 A IDR -5 V -10 -3 V -1 V VGS = -1.8 V 40 VGS = -2.5 V 20 VGS = -4 V 0 -80 ID = -1.3 A Drain reverse current 60 -1 VGS = 0 V 1V Common source Ta = 25C Pulse test -0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 Vth - Ta -1.2 Vth (V) Gate threshold voltage Common source Ta = 25C VGS = 0 V f = 1 MHz -1.0 (pF) -0.8 C Ciss 1000 Capacitance -0.6 -0.4 Common source VDS = -6 V ID = -1mA Pulse test -40 0 40 80 120 160 Coss Crss 100 -0.1 -1 -10 -100 -0.2 0 -80 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2.0 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 5s Dynamic input/output characteristics -20 VDS (V) -16 VDS VDD = -16 V PD Common source ID = -5 A Ta = 25C Pulse test -10 (W) -8 1.5 (1) (2) Drain power dissipation Drain-source voltage 1.0 -8 -8 V -4 V VDD = -16 V -4 0.5 (3) (4) -4 -4 V -2 0 0 40 80 120 160 200 0 0 10 20 0 30 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2008-12-21 Gate-source voltage -12 -8 V VGS -6 VGS (V) TPCP8302 rth - tw 1000 (4) Single pulse (3) (2) rth (C/W) 100 (1) Transient thermal impedance 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area -100 Single-device value at dual operation (Note 3b) (A) ID max (Pulse) * -10 1 ms * 10 ms * Drain current ID -1 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. -1 -10 -0.1 -0.1 VDSS max -100 Drain-source voltage VDS (V) 6 2008-12-21 TPCP8302 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2008-12-21 |
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